EEWORLDEEWORLDEEWORLD

Part Number

Search

RB225T-60HZC9

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size927KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric Compare View All

RB225T-60HZC9 Overview

Rectifier Diode,

RB225T-60HZC9 Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
package instructionR-PSFM-T3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.63 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage60 V
Maximum reverse current600 µA
Reverse test voltage60 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Schottky barrier diode
RB225T-60 Z
Applications
Switching power supply
Dimensions
(Unit : mm)
4.5±0.3
    0.1
Data
Sheet
Structure
AEC-Q101 Qualified
1.3
0.8
(1) (2) (3)
13.5MIN
Construction
Silicon epitaxial planar
1.2
5.0±0.2
8.0±0.2
12.0±0.2
15.0±0.4
  0.2
8.0
Features
1) Cathode common type.
(TO-220)
2) Low I
R
3) High reliability
10.0±0.3
    0.1
2.8±0.2
    0.1
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM :
TO220FN
Manufacture Date
●Packing
Dimensions
(Unit : mm)
7
540
34.5
Limits
Symbol
60
V
RM
Reverse voltage (repetitive peak)
Reverse voltage (DC)
60
V
R
30
Average rectified forward current(*1)
Io
100
I
FSM
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
150
Tj
Storage temperature
40
to
150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108C
Electrical
characteristic
(Ta=25C)
Parameter
Forward characteristics
Reverse characteristics
Thermal impedance
Absolute
maximum ratings
(Ta=25C)
Parameter
Unit
V
V
A
A
C
C
Symbol
V
F
I
R
jc
Min.
-
-
-
Typ.
-
-
-
Max.
0.63
600
1.75
Unit
V
μA
C/W
Conditions
I
F
=15A
V
R
=60V
junction to case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.09 - Rev.A

RB225T-60HZC9 Related Products

RB225T-60HZC9 RB225T-60HZ
Description Rectifier Diode, Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN
Maker ROHM Semiconductor ROHM Semiconductor
package instruction R-PSFM-T3 R-PSFM-T3
Reach Compliance Code compliant compliant
Other features HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.63 V 0.63 V
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 100 A 100 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 15 A 15 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Guideline AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 60 V 60 V
Maximum reverse current 600 µA 600 µA
Reverse test voltage 60 V 60 V
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号