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HY5PS56421F-E3

Description
DDR DRAM, 64MX4, 0.6ns, CMOS, PBGA60, FBGA-60
Categorystorage    storage   
File Size601KB,35 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY5PS56421F-E3 Overview

DDR DRAM, 64MX4, 0.6ns, CMOS, PBGA60, FBGA-60

HY5PS56421F-E3 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length14 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width12 mm
HY5PS56421(L)F
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HY5PS561621(L)F
256Mb DDR2 SDRAM
HY5PS56421(L)F
HY5PS56821(L)F
HY5PS561621(L)F
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev 1.0/ July. 2004
1

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