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NAND128W4A3DN6F

Description
8MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
Categorystorage    storage   
File Size150KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND128W4A3DN6F Overview

8MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48

NAND128W4A3DN6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time12000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density134217728 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm

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