1.85 pF, 7 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | R-PDSO-F2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | LOW INDUCTANCE |
| Minimum breakdown voltage | 7 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 22.22% |
| Minimum diode capacitance ratio | 1.1 |
| Nominal diode capacitance | 1.85 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | R-PDSO-F2 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 7 V |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Varactor Diode Classification | HYPERABRUPT |
| Base Number Matches | 1 |
| BBY52-02W | BBY52 | BBY52-02L | BBY52_07 | |
|---|---|---|---|---|
| Description | 1.85 pF, 7 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | 1.85 pF, 7 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | 1.85 pF, 7 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | 1.85 pF, 7 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| Maker | Infineon | Infineon | Infineon | - |
| package instruction | R-PDSO-F2 | SOT-23, 3 PIN | R-XBCC-N2 | - |
| Contacts | 2 | 3 | 2 | - |
| Reach Compliance Code | compliant | compli | compli | - |
| ECCN code | EAR99 | EAR99 | EAR99 | - |
| Minimum breakdown voltage | 7 V | 7 V | 7 V | - |
| Configuration | SINGLE | COMMON CATHODE, 2 ELEMENTS | SINGLE | - |
| Diode Capacitance Tolerance | 22.22% | 22.22% | 22.22% | - |
| Minimum diode capacitance ratio | 1.1 | 1.1 | 1.1 | - |
| Nominal diode capacitance | 1.85 pF | 1.85 pF | 1.85 pF | - |
| Diode component materials | SILICON | SILICON | SILICON | - |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | - |
| JESD-30 code | R-PDSO-F2 | R-PDSO-G3 | R-XBCC-N2 | - |
| Number of components | 1 | 2 | 1 | - |
| Number of terminals | 2 | 3 | 2 | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | SMALL OUTLINE | CHIP CARRIER | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | - |
| Maximum repetitive peak reverse voltage | 7 V | 6 V | 7 V | - |
| surface mount | YES | YES | YES | - |
| Terminal form | FLAT | GULL WING | NO LEAD | - |
| Terminal location | DUAL | DUAL | BOTTOM | - |
| Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | - |
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