K9F1216D0A-HCB00 datasheet, PDF

K9F1216D0A-HCB00: DescriptionFlash, 32MX16, 30ns, PBGA63, TBGA-63; Categorystorage storage; File Size831KB，48 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K9F1216D0A-HCB00 Overview

Flash, 32MX16, 30ns, PBGA63, TBGA-63

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA,
Contacts	63
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	30 ns
Other features	CONTAINS ADDITIONAL 16M BIT NAND FLASH
JESD-30 code	R-PBGA-B63
length	15 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum supply voltage (Vsup)	2.9 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	2.65 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8.5 mm

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