IPP12CN10NGHKSA1 datasheet, PDF

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IPP12CN10NGHKSA1: DescriptionPower Field-Effect Transistor, 67A I(D), 100V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size859KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IPP12CN10NGHKSA1 Overview

Power Field-Effect Transistor, 67A I(D), 100V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP12CN10NGHKSA1 Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	154 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	67 A
Maximum drain-source on-resistance	0.0129 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	268 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

IPP12CN10NGHKSA1 Related Products

	IPP12CN10NGHKSA1	IPI12CN10N G	IPP12CN10NGXKSA1	IPP12CN10N G	IPD12CN10NGBUMA1	IPI12CN10NGHKSA1	SP001127806
Description	Power Field-Effect Transistor, 67A I(D), 100V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN	mosfet N-CH 100v 67a to262-3	MOSFET N-CH 100V 67A TO-220	MOSFET N-CH 100V 67A TO-220	MOSFET N-CH 100V 67A TO252-3	Power Field-Effect Transistor, 67A I(D), 100V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3	Power Field-Effect Transistor,
Maker	Infineon	-	Infineon	-	Infineon	Infineon	Infineon
package instruction	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	-	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	-
Reach Compliance Code	unknown	-	unknown	-	compliant	unknown	compliant
ECCN code	EAR99	-	EAR99	-	EAR99	EAR99	-
Other features	FAST SWITCHING	-	FAST SWITCHING	-	FAST SWITCHING	FAST SWITCHING	-
Avalanche Energy Efficiency Rating (Eas)	154 mJ	-	154 mJ	-	154 mJ	154 mJ	-
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	100 V	-	100 V	-	100 V	100 V	-
Maximum drain current (ID)	67 A	-	67 A	-	67 A	67 A	-
Maximum drain-source on-resistance	0.0129 Ω	-	0.0129 Ω	-	0.0124 Ω	0.0129 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-220AB	-	TO-220AB	-	TO-252AA	TO-262AA	-
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3	-	R-PSSO-G2	R-PSIP-T3	-
Number of components	1	-	1	-	1	1	-
Number of terminals	3	-	3	-	2	3	-
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-
Package form	FLANGE MOUNT	-	FLANGE MOUNT	-	SMALL OUTLINE	IN-LINE	-
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	-
Maximum pulsed drain current (IDM)	268 A	-	268 A	-	268 A	268 A	-
surface mount	NO	-	NO	-	YES	NO	-
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	-
Terminal location	SINGLE	-	SINGLE	-	SINGLE	SINGLE	-
transistor applications	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	-	SILICON	-	SILICON	SILICON	-

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