EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

BAT54ALT1G_10

Description
0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AA
Categorysemiconductor    Discrete semiconductor   
File Size77KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

BAT54ALT1G_10 Overview

0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AA

BAT54ALT1G_10 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Maximum power consumption limit0.2250 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.1000 A

BAT54ALT1G_10 Related Products

BAT54ALT1G_10 BAT54ALT1D
Description 0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AA 0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AA
Number of terminals 3 3
Number of components 2 2
Processing package description HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY
structure COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Maximum power consumption limit 0.2250 W 0.2250 W
Diode type SIGNAL DIODE SIGNAL DIODE
Maximum reverse recovery time 0.0050 us 0.0050 us
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum average forward current 0.1000 A 0.1000 A

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号