SUR70N02-04P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.0037 @ V
GS
= 10 V
0.0061 @ V
GS
= 4.5 V
I
D
(A)
a
37
29
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
100% R
g
Tested
APPLICATIONS
D
Synchronous Buck Converter
−
Low Side
D
Synchronous Rectifier
−
Secondary Rectifier
TO-252
Reverse Lead DPAK
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUR70N02-04P—E3
SUR70N02-04P-T4—E3 (altrenate tape orientation)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
a
T
A
= 25_C
T
C
= 25_C
Conduction)
a
L = 0 1 mH
0.1
T
A
= 25_C
T
C
= 25_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
20
"20
37
a
70
b
100
37
30
45
8.3
a
93
−55
to 175
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
C/W
1
SUR70N02-04P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
15
0.0047
50
0.0028
0.0037
0.0052
0.0061
S
W
20
0.8
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Charge
c
Turn-On Delay Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 0.2
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
0.5
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
4500
1520
800
1.1
34
11
10
15
11
35
15
25
20
55
25
ns
1.8
153
nC
W
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
45
100
1.5
90
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
140
120
I D
−
Drain Current (A)
100
80
60
40
20
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
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3V
V
GS
= 10 thru 4 V
I D
−
Drain Current (A)
100
80
60
40
20
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
T
C
= 125_C
25_C
−55_C
3.0
3.5
4.0
140
120
Transfer Characteristics
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
2
SUR70N02-04P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
120
T
C
=
−55_C
r DS(on)
−
On-Resistance (
W
)
100
g fs
−
Transconductance (S)
80
60
40
20
0
0
10
20
30
40
50
25_C
125_C
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0
20
40
60
80
100
V
GS
= 10 V
V
GS
= 4.5 V
0.007
Vishay Siliconix
On-Resistance vs. Drain Current
I
D
−
Drain Current (A)
6000
5000
C
−
Capacitance (pF)
4000
3000
2000
C
rss
1000
0
0
4
8
12
16
20
V
DS
−
Drain-to-Source Voltage (V)
C
oss
I
D
−
Drain Current (A)
10
V
DS
= 10 V
I
D
= 50 A
Capacitance
Gate Charge
V GS
−
Gate-to-Source Voltage (V)
C
iss
8
6
4
2
0
0
15
30
45
60
75
Q
g
−
Total Gate Charge (nC)
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 30 A
I S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
r DS(on)
−
On-Resistance (
W
)
(Normalized)
1.4
T
J
= 150_C
T
J
= 25_C
10
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
www.vishay.com
3
SUR70N02-04P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
40
New Product
1000
Limited
by r
DS(on)
100
I D
−
Drain Current (A)
Safe Operating Area
32
I D
−
Drain Current (A)
10, 100
ms
1 ms
10 ms
100 ms
1s
10 s
100 s
dc
24
10
16
1
8
0.1
T
A
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
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Document Number: 72776
S-32697—Rev. A, 19-Jan-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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