IRFF9232 datasheet, PDF - EEWORLD Datasheet

IRFF9232: DescriptionPower Field-Effect Transistor, 3.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205; CategoryDiscrete semiconductor The transistor; File Size293KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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IRFF9232 Overview

Power Field-Effect Transistor, 3.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

Parameter Name	Attribute value
Maker	Vishay
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON

	IRFF9232	IRFF9233	IRFF9231	IRFF9230
Description	Power Field-Effect Transistor, 3.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205	Power Field-Effect Transistor, 3.5A I(D), 150V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205	Transistor	Transistor,
Reach Compliance Code	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	Single	Single
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
surface mount	NO	NO	NO	NO
Maker	Vishay	Vishay	-	Vishay

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