Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF27N50M
SFF27N50Z
1/
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF27N50 ___ ___ ___
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
27 AMP , 500 Volts, 175 mΩ
Avalanche Rated N-channel
MOSFET
Features:
•
•
•
•
•
•
•
•
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
Lead Option
3/
Package
3/ 4/
M = TO-254
Z = TO-254Z
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
o
5/ Unless otherwise specified, all electrical characteristics @25 C.
continuous
transient
Symbol
V
DSS
V
GS
I
D1
I
D2
I
D3
I
AR
E
AS
E
AR
P
D
T
OP
& T
STG
R
θJC
TO-254
Value
100
±20
±30
27
27
18
35
1500
50
100
-55 to +150
1.0
(typ.0.75)
Units
V
V
A
A
A
mJ
W
ºC
ºC /W
@ T
C
= 25ºC
@ T
C
= 25ºC
@ T
C
= 125ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T
C
= 25ºC
TO-254Z
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165G
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF27N50M
SFF27N50Z
Symbol
V
GS
= 0V, I
D
= 250μA
o
V
GS
= 10V, I
D
= 18A, Tj= 25 C
o
V
GS
= 10V, I
D
= 18A, Tj=125 C
o
V
DS
= V
GS
, I
D
= 4.0mA, Tj= 25 C
o
V
DS
= V
GS
, I
D
= 4.0mA, Tj= 125 C
V
DS
= V
GS
, I
D
= 4.0mA, Tj= -55
o
C
o
V
GS
= ±20V, Tj= 25 C
V
GS
= ±20V, Tj= 125
o
C
Electrical Characteristics
5/
Drain to Source Breakdown Voltage
Drain to Source On State
Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
500
––
––
––
3.0
2.0
––
––
––
––
––
15
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
510
170
400
4.0
3.0
5.0
10
30
0.01
5.0
35
95
30
35
25
30
75
25
0.95
180
8.0
0.85
5500
510
40
Max
––
175
––
5.0
––
6
±100
––
25
500
––
150
––
––
45
50
150
50
1.5
250
––
––
––
––
––
Units
V
mΩ
BV
DSS
R
DS(on)
V
GS(th)
I
GSS
I
DSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
I
RM
Q
rr
C
iss
C
oss
C
rss
V
nA
μA
μA
Mho
nC
V
DS
= 500V, V
GS
= 0V, T
j
= 25 C
o
V
DS
= 500V, V
GS
= 0V, T
j
= 125 C
V
DS
= 20V, I
D
= 18A, T
j
= 25
o
C
V
GS
= 10V
V
DS
= 250V
I
D
= 18A
V
GS
= 10V
V
DS
= 250V
I
D
= 35A
R
G
= 3.0Ω, pw= 3us
I
F
= 35A, V
GS
= 0V
I
F
= 25A, di/dt = 100A/usec
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
o
nsec
V
nsec
A
μC
pF
Available Part Numbers:
Consult Factory
TO254 (M)
PIN ASSIGNMENT (Standard)
Package
Drain
Source
Gate
TO-254 (M)
Pin 1
Pin 2
Pin 3
TO-254Z (Z)
Pin 1
Pin 2
Pin 3
TO254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165G
DOC
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