EEWORLDEEWORLDEEWORLD

Part Number

Search

SF803GC0G

Description
Rectifier Diode, 1 Phase, 2 Element, 4A, 150V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size394KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SF803GC0G Overview

Rectifier Diode, 1 Phase, 2 Element, 4A, 150V V(RRM), Silicon, TO-220AB,

SF803GC0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.975 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage150 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
CREAT BY ART
SF801G - SF808G
8.0AMPS. Glass Passivated Super Fast Rectifiers
TO-220AB
Features
High efficiency, low VF
High current capavility
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inverter,
free wheeling, and polarity protection
application
Green compound with suffix "G" on packing
code & prefix "G" on datecode.
Mechanical Data
Case: TO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free. Solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds 16".,(4.06mm) from case.
Weight: 1.90 grams
Ordering Information(example)
Part No.
SF801G
Package
Packing
Packing code
C0
Packing code
(Green)
C0G
TO-220AB 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@4A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25
@ T
A
=100
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
T
STG
SF
801G
50
35
50
SF
802G
100
70
100
SF
803G
150
105
150
SF
804G
200
140
200
8
SF
805G
300
210
300
SF
806G
400
280
400
SF
807G
500
350
500
SF
808G
600
480
600
Units
V
V
V
A
A
125
0.975
10
400
35
70
3
- 55 to + 150
- 55 to + 150
50
O
1.3
1.7
V
uA
uA
nS
pF
C/W
O
O
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Version:G13

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号