2N4906 datasheet, PDF - EEWORLD Datasheet

2N4906: DescriptionPower Bipolar Transistor, 5A I(C), 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size395KB，5 Pages; ManufacturerAdvanced Semiconductor, Inc.

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Power Bipolar Transistor, 5A I(C), 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

Parameter Name	Attribute value
Parts packaging code	TO-66
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	unknow
Maximum collector current (IC)	5 A
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	87 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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