2N6426 datasheet, PDF - EEWORLD Datasheet

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2N6426: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size46KB，1 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2N6426 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2N6426 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	7 pF
Collector-emitter maximum voltage	40 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	20000
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	1.5 V
Base Number Matches	1

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Transistors

USA / European specification models types

[Leaded type]

FTO-92

/ NPN type

General purpose small signal amplifiers

TO-92 package

General purpose amplification and switching

Medium power amplification

Darlington pair type

2N6426 Related Products

	2N6426	2N2925	2N5232A	MPSA29	MPSA28
Description	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	conform to
Reach Compliance Code	unknow	unknow	unknow	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	-	-
Maximum collector current (IC)	0.5 A	0.2 A	0.1 A	0.5 A	-
Collector-based maximum capacity	7 pF	10 pF	4 pF	-	-
Collector-emitter maximum voltage	40 V	25 V	50 V	-	-
Configuration	DARLINGTON	SINGLE	SINGLE	DARLINGTON	-
Minimum DC current gain (hFE)	20000	235	250	10000	-
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	-
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	-
JESD-609 code	e0	e0	e0	e0	-
Number of components	1	1	1	1	-
Number of terminals	3	3	3	3	-
Maximum operating temperature	150 °C	150 °C	150 °C	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	ROUND	ROUND	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	NPN	NPN	NPN	NPN	-
Maximum power dissipation(Abs)	0.625 W	0.8 W	0.62 W	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	NO	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	250 MHz	160 MHz	300 MHz	125 MHz	-
VCEsat-Max	1.5 V	0.3 V	0.125 V	-	-
Base Number Matches	1	1	1	1	-
package instruction	-	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3

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