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SPD30P06P
SPU30P06P
SIPMOS
®
Power-Transistor
Features
·
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
P-Channel
Enhancement mode
Avalanche rated
dv/dt rated
175°C operating temperature
V
DS
R
DS(on)
I
D
-60
0.075
-30
V
·
·
·
·
W
A
Type
SPD30P06P
SPU30P06P
Package
P-TO252-3
P-TO251-3
Pin 1
G
PIN 2/4
D
PIN 3
S
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Value
-30
-21.5
Unit
A
I
D
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current
I
D puls
E
AS
E
AR
dv/dt
-120
250
12.5
6
kV/µs
mJ
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= -30 A ,
V
DD
= -25 V,
R
GS
= 25
W
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= -30 A,
V
DS
= -48 V, di/dt = 200 A/µs,
T
jmax
= 175 °C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
125
-55...+175
55/175/56
V
W
°C
T
C
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev 2.0
Page 1
2008-02-18
SPD30P06P
SPU30P06P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
Values
typ.
-
-
-
-
max.
1.2
100
75
50
K/W
Unit
R
thJC
R
thJA
R
thJA
-
-
-
-
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
-3
max.
-
-4
µA
-
-
-0.1
-10
-10
0.069
-1
-100
-100
0.075
nA
V
Unit
V
(BR)DSS
V
GS(th)
I
DSS
-60
-2.1
V
GS
= 0 V,
I
D
= -250 µA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -1.7 mA
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
GSS
R
DS(on)
-
-
V
GS
= -20 V,
V
DS
= 0 V
Drain-source on-state resistance
W
V
GS
= -10 V,
I
D
= -21.5 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.0
Page 2
2008-02-18
SPD30P06P
SPU30P06P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Input capacitance
Values
typ.
max.
Unit
V
DS
³
2*I
D
*R
DS(on)max
,
I
D
= -21.5 A
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Output capacitance
g
fs
C
iss
C
oss
C
rss
t
d(on)
5.2
-
-
-
-
10.4
1228
387
142
13
-
1535
383
177
19.5
S
pF
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Turn-on delay time
ns
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -21.5 A,
R
G
= 1.6
W
Rise time
t
r
-
11
16.5
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -21.5 A,
R
G
= 1.6
W
Turn-off delay time
t
d(off)
-
30
45
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -21.5 A,
R
G
= 1.6
W
Fall time
t
f
-
20
30
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -21.5 A,
R
G
= 1.6
W
Rev 2.0
Page 3
2008-02-18
SPD30P06P
SPU30P06P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Gate to source charge
Values
typ.
max.
Unit
Q
gs
Q
gd
Q
g
V
(plateau)
-
-
-
-
3.7
13.8
32
-5.2
5.6
20.7
48
-
nC
V
DD
= -48 V,
I
D
= -30 A
Gate to drain charge
V
DD
= -48 V,
I
D
= -30 A
Gate charge total
V
DD
= -48 V,
I
D
= -30 A,
V
GS
= 0 to -10 V
Gate plateau voltage
V
V
DD
= -48 V ,
I
D
= -30 A
Parameter
Reverse Diode
Inverse diode continuous forward current
Symbol
min.
Values
typ.
-
-
-1.3
64.6
153
max.
-30
-120
-1.7
97
230
Unit
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
A
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
ns
nC
V
GS
= 0 V,
I
F
= -30
Reverse recovery time
V
R
= -30 V,
I
F
=
I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= -30 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Rev 2.0
Page 4
2008-02-18
Automotive Electronics
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