2SC2922Y datasheet, PDF - EEWORLD Datasheet

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2SC2922Y: DescriptionPower Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，1 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/

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2SC2922Y Overview

Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN

2SC2922Y Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	17 A
Collector-emitter maximum voltage	180 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

2SC2922Y Related Products

	2SC2922Y	2SC2922G	2SC2922P	2SC2922O
Description	Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN	Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN	Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN	Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	17 A	17 A	17 A	17 A
Collector-emitter maximum voltage	180 V	180 V	180 V	180 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	90	70	30
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz
Base Number Matches	1	1	1	1

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