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CD5525BE3

Description
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2
CategoryDiscrete semiconductor    diode   
File Size126KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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CD5525BE3 Overview

Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2

CD5525BE3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionS-XXUC-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeS-XXUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Nominal reference voltage6.2 V
surface mountYES
technologyZENER
Terminal formNO LEAD
Terminal locationUNSPECIFIED
Maximum voltage tolerance5%
Working test current1 mA
• 1N5518B THRU 1N5546B AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/437
• ZENER DIODE CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B
• 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD5518B
thru
CD5546B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Forward Voltage @ 200 mA: 1.5 Volts Maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed
JEDEC
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
VZ @ lZT
VOLTS
(Note 1)
CD5518B
CD5519B
CD5520B
CD5521B
CD5522B
CD5523B
CD5524B
CD5525B
CD5526B
CD5527B
CD5528B
CD5529B
CD5530B
CD5531B
CD5532B
CD5533B
CD5534B
CD5535B
CD5536B
CD5537B
CD5538B
CD5539B
CD5540B
CD5541B
CD5542B
CD5543B
CD5544B
CD5545B
CD5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
MAX. ZENER
IMPEDANCE
ZZT @ lZT
OHMS
(Note 2)
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
MAX. REVERSE
LEAKAGE CURRENT
lR
µ
Adc
23 MILS
15 MILS
TEST
CURRENT
lZT
mAdc
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
REGULATION
FACTOR
³VZ
VOLTS
(Note 3)
0.90
0.90
0.90
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
LOW
VZ
CURRENT
lZL
mAdc
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.10
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
V
R
VOLTS
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
BACKSIDE IS CATHODE
DESIGN DATA
METALLIZATION:
Top: (Anode)......................Al
Back: (Cathode)............ ...Au
AL THICKNESS............25,000
Å
Min
GOLD THICKNESS...
.....4,000
Å
Min
CHIP THICKNESS..............
....10 Mils
CIRCUIT LAYOUT DATA:
For Zener operation, cathode
must be operated positive with
respect to anode.
TOLERANCES:
ALL Dimensions
+ 2 mils, Except Anode Pad Where
Tolerance is + 0.1 mils.
NOTE 1
Suffix “B” voltage range equals nominal Zener voltage + 5%. Suffix “A” equals
+ 10%. No Suffix equals + 20%. Zener voltage is read using a pulse
measurement, 10 milliseconds maximum. "C" suffix = + 2% and "D" suffix = +1%.
NOTE 2
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c.
current equal to 10% of lZT.
NOTE 3
³VZ is the maximum difference between VZ @ 1ZT and VZ at 1ZL measured
with the device junction in thermal equilibrium at an ambient temperature of
+25° + 3°C.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
209
15 MILS
23 MILS

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