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2DC4617Q-13

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size62KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

2DC4617Q-13 Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-3

2DC4617Q-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
Base Number Matches1
SPICE MODEL: 2DC4617R
2DC4617Q/R/S
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
Ultra Miniature Surface Mount Package
Complementary PNP Type Available (2DA1774Q,R,S)
Available in Lead Free/RoHS Compliant Version
(Note 3)
A
C
B C
E
G
H
K
N
M
SOT-523
Dim
A
B
C
D
G
H
J
K
J
D
L
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See diagram
Also Available in Lead Free Plating (Matte Tin annealed
over Alloy 42 leadframe). Please See Ordering Information,
Note 5, on Page 3
Marking (See Last Page):
2DC4617Q: 8D
2DC4617R: 8E
2DC4617S: 8F
B
L
M
N
a
Ordering Information: See Last Page
Weight: 0.002 grams (approx.)
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
@ T
A
= 25°C unless otherwise specified
Symbol
R
qJA
T
j
, T
STG
2DC4617Q/R/S
833
-55 to +150
Unit
°C/W
°C
2DC4617Q/R/S
60
50
7.0
150
150
Unit
V
V
V
mA
mW
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
2DC4617Q
2DC4617R
2DC4617S
Min
60
50
7.0
¾
¾
120
180
270
¾
2.0 Typ.
180 Typ.
Max
¾
¾
¾
100
100
270
390
560
0.4
3.5
¾
Unit
V
V
V
nA
nA
Test Condition
I
C
= 50mA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 50mA, I
C
= 0
V
CB
= 60V
V
EB
= 7.0V
h
FE
V
CE(SAT)
C
obo
f
T
¾
V
pF
MHz
V
CE
= 6.0V, I
C
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 12V, f = 1.0MHz, I
E
= 0
V
CE
= 12V, I
E
= -2mA, f = 1MHz
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS30252 Rev. 6 - 2
1 of 3
www.diodes.com
2DC4617Q/R/S
ã
Diodes Incorporated

2DC4617Q-13 Related Products

2DC4617Q-13 2DC4617R-13 2DC4617S-13
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 180 270
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 180 MHz 180 MHz 180 MHz
Base Number Matches 1 1 1
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