2N4398LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N4398LEADFREE: DescriptionPower Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size487KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N4398LEADFREE Overview

Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N4398LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-204AA
package instruction	TO-3, 2 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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2N4398

2N4399

2N5745

PNP SILICON

POWER TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4398 series

types are PNP silicon power transistors designed for

power amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-3 CASE

SYMBOL

2N4398

2N4399

2N5745

VCBO

40

60

80

VCEO

40

60

80

VEBO

5.0

IC

30

20

ICM

50

IB

7.5

IBM

15

PD

200

PD

5.0

TJ, Tstg

-65 to +200



JA

35



JC

0.875

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

2N4398

2N4399

2N5745

SYMBOL

TEST CONDITIONS

MIN MAX

ICBO

VCB=Rated VCBO

-

1.0

-

1.0

-

1.0

ICEX

VCE=Rated VCEO, VEB=1.5V

-

5.0

-

5.0

-

5.0

ICEX

VCE=30V, VEB=1.5V, TC=150°C

-

10

-

10

-

ICEX

VCE=80V, VEB=1.5V, TC=150°C

-

10

ICEO

VCE=Rated VCEO

-

5.0

-

5.0

-

5.0

IEBO

VEB=5.0V

-

5.0

-

5.0

-

5.0

BVCEO

IC=200mA

40

-

60

-

80

-

VCE(SAT)

IC=10A, IB=1.0A

-

0.75

-

0.75

-

1.0

VCE(SAT)

IC=15A, IB=1.5A

-

1.0

-

1.0

-

1.5

VCE(SAT)

IC=20A, IB=2.0A

-

2.0

-

2.0

-

VCE(SAT)

IC=20A, IB=4.0A

-

2.0

VCE(SAT)

IC=30A, IB=6.0A

-

4.0

-

4.0

-

VBE(SAT)

IC=10A, IB=1.0A

-

1.6

-

1.6

-

1.7

VBE(SAT)

IC=15A, IB=1.5A

-

1.85

-

1.85

-

2.0

VBE(SAT)

IC=20A, IB=2.0A

-

2.5

-

2.5

-

VBE(SAT)

IC=20A, IB=4.0A

-

2.5

VBE(ON)

VCE=2.0V, IC=10A

-

1.5

VBE(ON)

VCE=2.0V, IC=15A

-

1.7

-

1.7

-

VBE(ON)

VCE=4.0V, IC=20A

-

2.5

VBE(ON)

VCE=4.0V, IC=30A

-

3.0

-

3.0

-

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

UNITS

V

A

W

°C

°C/W

UNITS

mA

V

R0 (30-July 2012)

2N4398LEADFREE Related Products

	2N4398LEADFREE	2N5745LEADFREE	2N4399LEADFREE
Description	Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	TO-204AA	TO-204AA	TO-204AA
package instruction	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN
Contacts	2	2	2
Reach Compliance Code	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	30 A	20 A	30 A
Collector-emitter maximum voltage	40 V	80 V	60 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15
JEDEC-95 code	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	2	2	2
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	2 MHz	4 MHz
Base Number Matches	1	1	1

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