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TCBZX85C39.TB

Description
Zener Diode, 39V V(Z), 5.13%, 1.3W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size499KB,6 Pages
ManufacturerTak Cheong
Websitehttp://www.takcheong.com/
Environmental Compliance  
Download Datasheet Parametric View All

TCBZX85C39.TB Overview

Zener Diode, 39V V(Z), 5.13%, 1.3W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2

TCBZX85C39.TB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTak Cheong
Parts packaging codeDO-41
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance45 Ω
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Certification statusNot Qualified
Nominal reference voltage39 V
surface mountNO
technologyZENER
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5.13%
Working test current6 mA
®
TAK CHEONG
SEM ICONDUCTOR
1.3 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings
Parameter
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
Lead Temperature (1/16” from case for 10 seconds)
T
A
= 25°C unless otherwise noted
Value
1.3
-65 to +200
+200
+230
Units
W
°C
°C
°C
AXIAL LEAD
DO41
DEVICE MARKING DIAGRAM
L
85C
xxx
L
: Logo
Device Code : TCBZX85C3V3
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 3.3 to 56 Volts
DO-41 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
ELECTRICAL SYMBOL
Cathode
Anode
Electrical Characteristics
Device Type
TCBZX85C 3V3
TCBZX85C 3V6
TCBZX85C 3V9
TCBZX85C 4V3
TCBZX85C 4V7
TCBZX85C 5V1
TCBZX85C 5V6
TCBZX85C 6V2
TCBZX85C 6V8
TCBZX85C 7V5
TCBZX85C 8V2
TCBZX85C 9V1
TCBZX85C 10
TCBZX85C 11
TCBZX85C 12
TCBZX85C 13
TCBZX85C 15
TCBZX85C 16
TCBZX85C 18
TCBZX85C 20
TCBZX85C 22
V
Z
@ I
ZT
(Volts)
V
Z
V
Z
Min
Max
3.1
3.5
3.4
3.8
3.7
4.1
4
4.6
4.4
5
4.8
5.4
5.2
6
5.8
6.6
6.4
7.2
7
7.9
7.7
8.7
8.5
9.6
9.4
10.6
10.4
11.6
11.4
12.7
12.4
14.1
13.8
15.6
15.3
17.1
16.8
19.1
18.8
21.2
20.8
23.3
T
A
= 25°C unless otherwise noted
I
ZT
(mA)
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
Z
ZT
@ I
ZT
(Ω)
Max
20
20
15
13
13
10
7
4
3.5
3
5
5
7
8
9
10
15
15
20
24
25
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
400
500
500
500
500
500
400
300
300
200
200
200
200
300
350
400
500
500
500
600
600
I
R
@ V
R
(µA)
Max
40
20
20
3
3
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
V
R
(Volts)
1
1
1
1
1
1.5
2
3
4
4.5
6.2
6.9
7.5
8.2
9.1
10
11
12
13
15
16
March 2003 / B
Page 1
TCBZX85C3V3 through TCBZX85C56 Series

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