HSU277TRF-E datasheet, PDF - EEWORLD Datasheet

HSU277TRF-E: DescriptionSILICON, VHF-UHF BAND, MIXER DIODE, ROHS COMPLIANT, URP, 2 PIN; CategoryDiscrete semiconductor diode; File Size70KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HSU277TRF-E Overview

SILICON, VHF-UHF BAND, MIXER DIODE, ROHS COMPLIANT, URP, 2 PIN

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	R-PDSO-G2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Maximum diode capacitance	1.2 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
surface mount	YES
technology	PLANAR DOPED BARRIER
Terminal form	GULL WING
Terminal location	DUAL

	HSU277TRF-E	HSU277TRF-EQ
Description	SILICON, VHF-UHF BAND, MIXER DIODE, ROHS COMPLIANT, URP, 2 PIN	SILICON, VHF-UHF BAND, MIXER DIODE
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
package instruction	R-PDSO-G2	R-PDSO-G2
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Maximum diode capacitance	1.2 pF	1.2 pF
Diode component materials	SILICON	SILICON
Diode type	MIXER DIODE	MIXER DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-G2	R-PDSO-G2
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
surface mount	YES	YES
technology	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL

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