4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
September 2009
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M
High Voltage Phototransistor Optocouplers
Features
■
High voltage:
General Description
The 4N38M, H11DXM and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
– MOC8204M, BV
CER
= 400V
– H11D1M, H11D2M, BV
CER
= 300V
– H11D3M, BV
CER
= 200V
■
High isolation voltage:
– 7500 V
AC
peak, 1 second
■
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
■
IEC 60747-5-2 approved (ordering option V)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Schematic
Package Outlines
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ T
A
= 25°C
Derate Above 25°C
Forward DC Current
(1)
Reverse Input Voltage
(1)
Forward Current – Peak (1µs pulse, 300pps)
(1)
LED Power Dissipation @ T
A
= 25°C
(1)
Derate Above 25°C
Device
All
All
All
All
Value
-40 to +150
-40 to +100
260 for 10 sec
260
3.5
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
All
All
All
All
80
6.0
3.0
150
1.41
DETECTOR
P
D
V
CER
Power Dissipation @ T
A
= 25°C
Derate linearly above 25°C
Collector to Emitter Voltage
(1)
MOC8204M
H11D1M, H11D2M
H11D3M
4N38M
V
CBO
Collector Base Voltage
(1)
MOC8204M
H11D1M, H11D2M
H11D3M
4N38M
V
ECO
Emitter to Collector Voltage
(1)
H11D1M, H11D2M,
H11D3M,
MOC8204M
All
All
300
4.0
400
300
200
80
400
300
200
80
7
V
V
mW
mW/°C
V
I
C
Collector Current (Continuous)
100
mA
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
2
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
∆
V
F
∆
T
A
BV
R
C
J
I
R
Forward Voltage
(2)
Forward Voltage
Temp. Coefficient
Reverse Breakdown
Voltage
Junction Capacitance
Reverse Leakage
Current
(2)
Breakdown Voltage
Collector to Emitter
(2)
I
R
= 10µA
V
F
= 0V, f = 1MHz
V
F
= 1V, f = 1MHz
V
R
= 6V
All
I
F
= 10mA
All
All
All
All
6
1.15
-1.8
25
50
65
0.05
10
1.5
V
mV/°C
V
pF
pF
µA
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR
BV
CER
R
BE
= 1M
Ω
, I
C
= 1.0mA, I
F
= 0
MOC8204M
H11D1M/2M
H11D3M
BV
CEO
BV
CBO
Collector to Base
(2)
No RBE, I
C
= 1.0mA
I
C
= 100µA, I
F
= 0
4N38M
MOC8204M
H11D1M/2M
H11D3M
4N38M
BV
EBO
BV
ECO
I
CER
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
(2)
(R
BE
= 1M
Ω
)
I
E
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 300V, I
F
= 0, T
A
= 25°C
V
CE
= 300V, I
F
= 0, T
A
= 100°C
V
CE
= 200V, I
F
= 0, T
A
= 25°C
V
CE
= 200V, I
F
= 0, T
A
= 100°C
V
CE
= 100V, I
F
= 0, T
A
= 25°C
V
CE
= 100V, I
F
= 0, T
A
= 100°C
I
CEO
No R
BE
, V
CE
= 60V, I
F
= 0,
T
A
= 25°C
4N38M
H11D3M
H11D1M/2M
4N38M
All
MOC8204M
400
300
200
80
400
300
200
80
7
7
10
100
250
100
250
100
250
50
V
V
nA
µA
nA
µA
nA
µA
nA
V
V
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Symbol
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
Saturation Voltage
(2)
Characteristics
Test Conditions
I
F
= 10mA, V
CE
= 10V,
R
BE
= 1M
Ω
I
F
= 10mA, V
CE
= 10V
I
F
= 10mA, I
C
= 0.5mA,
R
BE
= 1M
Ω
I
F
= 20mA, I
C
= 4mA
Device
H11D1M/2M/3M,
MOC8204M
4N38M
H11D1M/2M/3M,
MOC8204M
4N38M
All
All
Min.
2 (20)
2 (20)
Typ.*
Max.
Units
mA (%)
V
CE(SAT)
0.1
0.40
1.0
V
SWITCHING TIMES
t
ON
t
OFF
Non-Saturated
Turn-on Time
Turn-off Time
V
CE
= 10V, I
CE
= 2mA,
R
L
= 100Ω
5
5
µs
µs
*All Typical values at T
A
= 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
3
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
DC Electrical Characteristics
(Continued) (T
A
= 25°C unless otherwise specified.)
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 500 VDC
f = 1MHz
Device
All
All
All
Min.
7500
10
11
Typ.*
Max.
Units
V
AC
PEAK
Ω
0.2
pF
*All Typical values at T
A
= 25°C
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
4
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
T
A
= -55˚C
1.3
T
A
= 25˚C
1.2
1.1
1.0
1
T
A
= 100˚C
10
100
Fig. 2 Normalized Output Characteristics
NORMALIZED I
CER
– OUTPUT CURRENT
Normalized to:
V
CE
= 10V
I
F
= 10mA
R
BE
= 10
6
Ω
T
A
= 25˚C
I
F
= 50mA
1
I
F
= 10mA
V
F
– FORWARD VOLTAGE (V)
10
I
F
= 5mA
0.1
0.01
0.1
1
10
100
I
F
– LED FORWARDCURRENT (mA)
V
CE
– COLLECTOR VOLTAGE (V)
Fig. 3 Normalized Output Current vs. LED Input Current
NORMALIZED I
CER
– OUTPUT CURRENT
NORMALIZED I
CER
– OUTPUT CURRENT
10
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
1
Fig. 4 Normalized Output Current vs. Temperature
Normalized to:
V
CE
= 10V
I
F
= 10mA
R
BE
= 10
6
Ω
T
A
= 25˚C
I
F
= 20mA
I
F
= 10mA
1
I
F
= 5mA
0.1
0.01
1
10
0.1
-60
-40
-20
0
20
40
60
80
100
I
F
– LED INPUT CURRENT (mA)
T
A
– AMBIENT TEMPERATURE (˚C)
NORMALIZED I
CBO
– COLLECTOR-BASE CURRENT
Fig. 5 Normalized Dark Current vs. Ambient Temperature
NORMALIZED I
CER
– DARK CURRENT
Normalized to:
V
CE
= 100V
R
BE
= 10
6
Ω
T
A
= 25˚C
V
CE
= 300V
Fig. 6 Normalized Collector-Base Current vs. Temperature
10
9
8
I
F
= 50mA
7
6
5
4
3
2
1
0
-60
I
F
= 5mA
-40
-20
0
20
40
60
80
100
I
F
= 10mA
Normalized to:
V
CE
= 10V
I
F
= 10mA
R
BE
= 10
6
Ω
T
A
= 25˚C
10000
1000
100
V
CE
= 100V
10
1
V
CE
= 50V
0.1
10
20
30
40
50
60
70
80
90
100
110
T
A
– AMBIENT TEMPERATURE (˚C)
T
A
– AMBIENT TEMPERATURE (˚C)
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
5
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