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GVT71512D18B-6

Description
Cache SRAM, 512KX18, 4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
Categorystorage    storage   
File Size519KB,27 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

GVT71512D18B-6 Overview

Cache SRAM, 512KX18, 4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119

GVT71512D18B-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCypress Semiconductor
Parts packaging codeBGA
package instruction14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
Contacts119
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time4 ns
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height2.4 mm
Maximum standby current0.01 A
Minimum standby current3.14 V
Maximum slew rate0.425 mA
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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