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LDT918

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size130KB,4 Pages
ManufacturerMicronova Technology Inc
Download Datasheet Parametric Compare View All

LDT918 Overview

Transistor

LDT918 Parametric

Parameter NameAttribute value
MakerMicronova Technology Inc
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.05 A
ConfigurationSingle
Minimum DC current gain (hFE)20
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
surface mountYES

LDT918 Related Products

LDT918 LDT918T
Description Transistor Transistor
Maker Micronova Technology Inc Micronova Technology Inc
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.05 A 0.05 A
Configuration Single Single
Minimum DC current gain (hFE) 20 20
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.4 W 0.4 W
surface mount YES YES
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