934055697118 datasheet, PDF - EEWORLD Datasheet

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934055697118: DescriptionTRANSISTOR 23 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size99KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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934055697118 Overview

TRANSISTOR 23 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power

934055697118 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SC-63
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	93 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	23 A
Maximum drain-source on-resistance	0.07 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	92 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

934055697118 Related Products

	934055697118	934055696118	934055681127	PHB23NQ10T	PHB23NQ10T/T3
Description	TRANSISTOR 23 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power	TRANSISTOR 23 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power	TRANSISTOR 23 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power	23A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET	23A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET
Maker	NXP	NXP	NXP	NXP	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	93 mJ	93 mJ	93 mJ	93 mJ	93 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	23 A	23 A	23 A	23 A	23 A
Maximum drain-source on-resistance	0.07 Ω	0.07 Ω	0.07 Ω	0.07 Ω	0.07 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1	1
Number of terminals	2	2	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	92 A	92 A	92 A	92 A	92 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	YES	YES
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Contacts	3	3	3	-	-

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