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AH236-CHIP2

Description
Variable Capacitance Diode, Very High Frequency to KA Band, 2.8pF C(T), 22V, Gallium Arsenide, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size179KB,4 Pages
Manufacturere2v technologies
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AH236-CHIP2 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 2.8pF C(T), 22V, Gallium Arsenide, Hyperabrupt

AH236-CHIP2 Parametric

Parameter NameAttribute value
Makere2v technologies
package instructionO-XEMW-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Nominal diode capacitance2.8 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO KA BAND
JESD-30 codeO-XEMW-F2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor2000
surface mountYES
Terminal formFLAT
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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