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2N4870

Description
Unijunction Transistor, 5uA I(P)
CategoryDiscrete semiconductor    The transistor   
File Size61KB,1 Pages
ManufacturerSilicon Group Inc.
Download Datasheet Parametric View All

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Unijunction Transistor, 5uA I(P)

2N4870 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSilicon Group Inc.
package instruction,
Reach Compliance Codeunknown
Maximum emitter current50 mA
Maximum base-to-base voltage35 V
maximum eigendeviation ratio0.75
minimum intrinsic deviation ratio0.56
JESD-609 codee0
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum peak current5 mA
Maximum power dissipation(Abs)0.3 W
Maximum static resistance between bases9.1 kΩ
Minimum static resistance between bases4 kΩ
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Minimum valley point current2 mA

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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