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SS8050CTA-D

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

SS8050CTA-D Overview

Small Signal Bipolar Transistor

SS8050CTA-D Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Maximum collector current (IC)1.5 A
Collector-based maximum capacity9 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.5 V
SS8050 — NPN Epitaxial Silicon Transistor
November 2014
SS8050
NPN Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I
C
= 1.5 A
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
SS8050BBU
SS8050CBU
SS8050CTA
SS8050DBU
SS8050DTA
Top Mark
S8050
S8050
S8050
S8050
S8050
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Bulk
Ammo
Bulk
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Value
40
25
6
1.5
150
-65 to 150
Unit
V
V
V
A
°C
°C
© 2004 Fairchild Semiconductor Corporation
SS8050 Rev. 1.1.0
www.fairchildsemi.com
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