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2SD2012

Description
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size694KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
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2SD2012 Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220F, 3 PIN

2SD2012 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1

2SD2012 Related Products

2SD2012 2SD2012-B
Description Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220F, 3 PIN Transistor
Is it Rohs certified? incompatible incompatible
Reach Compliance Code compli unknow
JESD-609 code e0 e0
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1
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