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SSR1008ZU

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size130KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SSR1008ZU Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN

SSR1008ZU Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeTO-254Z
package instructionHERMETIC SEALED, TO-254Z, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
JESD-30 codeS-XDFM-P3
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature175 °C
Maximum output current10 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationDUAL
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR1008M, SSR1008Z
SSR1009M, SSR1009Z
SSR1010M, SSR1010Z
10 AMPS
80 - 100 VOLTS
SCHOTTKY RECTIFIER
Designer’s Data Sheet
Part Number/Ordering Information
1/
SSR1008 __ __ __
SSR1009 __ __ __
SSR1010 __ __ __
│ └
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Lead Options
__ = Straight Leads
DB = Bent Down
UB = Bent Up
Package
M = TO-254
Z = TO-254Z
FEATURES:
Extremely Low Forward Voltage Drop
Low Reverse Leakage Current
Hermetically Sealed Package
Guard Ring for Overvoltage Protection
Eutectic Die Attach
175
°
C Operating Junction Temperature
TX, TXV, or Space Level Screening
Available
MAXIMUM RATINGS
RATING
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Average Rectified Output Current
3/
(Resistive Load, 60Hz, Sine Wave, TA=25
°
C)
SSR1008
SSR1009
SSR1010
SYMBOL
V
RRM
V
RWM
V
R
I
O
VALUE
80
90
100
10
UNIT
Volts
Amps
Amps
°
Peak Surge Current
3/
(8.3 ms Pulse, Half Sine Wave, superimposed on I
O
, allow
°
junction to reach equilibrium between pulses, TA=25 C)
I
FSM
T
OP
& T
STG
R
θJC
200
-65 to +175
2.0
°
Operating and Storage Temperature
Maximum Thermal Resistance
3/
Junction to Case
NOTES:
1/ For ordering information, price, and availability- Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ For optimal performance, connect leads 2 & 3 together.
C
C/W
TO-254
TO-254Z
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0205L
DOC

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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