BC177B-QR-B datasheet, PDF - EEWORLD Datasheet

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BC177B-QR-B: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size22KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BC177B-QR-B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3

BC177B-QR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL PACKAGE-3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	240
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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BC177

BC178

BC179

MECHANICAL DATA

Dimensions in mm (inches)

5 .8 4 (0 .2 3 0 )

5 .3 1 (0 .2 0 9 )

4 .9 5 (0 .1 9 5 )

4 .5 2 (0 .1 7 8 )

GENERAL PURPOSE

SMALL SIGNAL

PNP BIPOLAR TRANSISTOR

APPLICATIONS

5 .3 3 (0 .2 1 0 )

4 .3 2 (0 .1 7 0 )

)

0

1

7

2

1

.

0

(

3

2

3

.

5

4

)

0

5

.

0 .4 8 (0 .0 1 9 )

0 .4 1 (0 .0 1 6 )

d ia .

n

0

i

(

m

7

.

2

1

The BC 177, BC 178 & BC 179 are silicon

epitaxial planar PNP transistors in TO-18

metal case. They are suitablefor use in

driver audio stages, low noise input audio

stages and as low power, high gain general

purpose transistors.

2 .5 4 (0 .1 0 0 )

N o m .

1 2 .7 (0 .5 0 0 )

m in .

FEATURES

• SILICON NPN

!

• HERMETICALLY SEALED TO18

• SCREENING OPTIONS AVAILABLE

TO–18 METAL PACKAGE

Underside View

PIN 1 – Emitter

PIN 2 – Base

PIN 3 – Collector

BC177

-50V

-45V

-50V

BC178

-30V

-25V

-30V

-5V

-0.1A

0.3W

500W/°C

0.75W

200W/°C

-65 to +175°C

BC179

-25V

-20V

-25V

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise stated)

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

D

P

D

T

j,

T

stg

Collector – Base Continuous Voltage

Collector – Emitter Continuous Voltage With Zero Base Current

Collector – Emitter Continuous Voltage With Base Shortcircuited to Emitter

Emitter – Base Continuous Voltage Reverse Voltage

Continuous Collector Current

Power Device Dissipation @ T

A

= 25°C

Derate above 25°C

Power Device Dissipation @ T

C

= 25°C,

Derate above 25°C

Operating and Storage Junction to Case

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 5760

Issue 1

BC177B-QR-B Related Products

	BC177B-QR-B	BC177B-QR-BG4
Description	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3
Is it Rohs certified?	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, METAL PACKAGE-3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	240	240
JEDEC-95 code	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	175 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz

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