2SJ127 datasheet, PDF - EEWORLD Datasheet

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2SJ127: Description10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size155KB，1 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SJ127 Overview

10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

2SJ127 Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	120 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	50 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SJ127 Related Products

	2SJ127	2SJ237	2SK1776	2SK1778	2SK2830	2SJ236	2SK1777
Description	10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	15A, 60V, 0.11ohm, P-CHANNEL, Si, POWER, MOSFET	10A, 60V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET	10A, 100V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET	9A, 500V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET	10A, 60V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET	15A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET
Reach Compliance Code	unknow	unknow	compli	compli	compli	unknow	compli
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	120 V	60 V	60 V	100 V	500 V	60 V	60 V
Maximum drain current (ID)	10 A	15 A	10 A	10 A	9 A	10 A	15 A
Maximum drain-source on-resistance	0.25 Ω	0.11 Ω	0.22 Ω	0.35 Ω	0.55 Ω	0.25 Ω	0.095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	P-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
package instruction	-	FLANGE MOUNT, R-PSFM-T3	-	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED

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