Ordering number:ENN2848A
NPN Triple Diffused Planar Silicon Transistor
2SC4425
400V/25A Switching Regulator Applications
Features
· High breakdown voltage, high reliability.
· Fast switching speed (t
f
: 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2039D
[2SC4425]
3.4
16.0
5.0
8.0
5.6
3.1
21.0
22.0
20.4
2.8
2.0
1.0
4.0
2.0
0.6
1
2
3
3.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, duty cycle≤10%
5.45
5.45
Conditions
Ratings
500
400
7
25
40
8
3
2.0
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Tc=25˚C
65
150
–55 to +150
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
VCB=400V, IE=0
VEB=5V, IC=0
Conditions
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51503TS (KT)/83002RM (KT)/D1898HA (KT)/O258MO, TS No.2848–1/4
2SC4425
Continued from preceding page.
Parameter
Symbol
hFE1*
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
hFE2
hFE3
VCE(sat)
VBE(sat)
fT
Cob
VCE=5V, IC=3.2A
VCE=5V, IC=16A
VCE=5V, IC=10mA
IC=16A, IB=3.2A
IC=16A, IB=3.2A
VCE=10V, IC=3.2A
VCB=10V, f=1MHz
500
400
7
400
0.5
2.5
0.3
20
300
Conditions
Ratings
min
15
10
10
0.8
1.5
V
V
MHz
pF
V
V
V
V
µs
µs
µs
typ
max
50
Unit
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=10mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
VCEX(sus) IC=10A, IB1=1A, IB2=–4A, L=200µH, Clamped
ton
IC=20A, IB1=4A, IB2=–8A, RL=10
Ω,
VCC=200V
tstg
tf
IC=20A, IB1=4A, IB2=–8A, RL=10
Ω,
VCC=200V
IC=20A, IB1=4A, IB2=–8A, RL=10
Ω,
VCC=200V
* : The h
FE
1 of the 2SC4425 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
L
15 to 30
M
20 to 40
N
30 to 50
Switching Time Test Circuit
INPUT
PW=20µs
D.C.≤1%
50Ω
IB1
IB2
RB
VR
+
100µF
VBE= --5V
50
OUTPUT
RL
+
470µF
VCC=200V
28
IC -- VCE
5000mA
4500mA
4000mA
3500mA
Collector Current, IC – A
IC -- VBE(on)
VCE=5V
24
Collector Current, IC – A
40
20
30
20
500mA
10
8
4
0
0
2
4
6
8
IB=0
10
ITR06830
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-to-Emitter Voltage, VCE – V
2
Base-to-Emitter ON Voltage, VBE(on) – V
ITR06831
3
2
hFE -- IC
VCE=5V
VCE(sat) -- IC
IC / IB=5
100
7
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
1.0
7
5
3
2
DC Current Gain, hFE
5
3
2
Ta=120
°C
25
°C
--40
°
C
Ta=
1
1000mA
12
C
25
°
C
--40
°
C
2 3
5
20
°
00mA
3000mA
25
2000mA
1500mA
16
10
7
5
3
2
0.01 2
3
5
0.1
2
3
5
1.0
2
3
5
10
2
3
5
7
5
3
0.01
25
°C
2 3
5
0.1
2 3
5
--4
2 3
0.1
0
°
C
=
Ta
0
12
°
C
1.0
10
5
Collector Current, IC – A
ITR06832
Collector Current, IC – A
ITR06833
No.2848–2/4
2SC4425
10
7
VBE(sat) -- IC
IC / IB=5
Switching Time, SW Time –
µs
10
7
5
3
2
1.0
7
5
3
2
SW Time -- IC
tst
g
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
VCC=200V
IC=5IB1= --2.5IB2
R load
1.0
7
5
3
2
0.01
2 3
5
Ta= --40°C
ton
tf
25
°C
120
°
C
0.1
7
5
0.1
2 3
5
Collector Current, IC – A
1.0
2 3
5
10
2 3
5
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5
ITR06834
100
7
5
Collector Current, IC – A
ITR06835
100
7
5
Forward Bias A S O
ICP=40A
IC=25A
DC
Di
opera
Lim ssipa
tion
ite tion
d
s
0
µ
10
1m
Reverse Bias A S O
ICP=40A
<50µs
Collector Current, IC – A
10
7
5
3
2
Collector Current, IC – A
3
2
3
2
10
7
5
3
2
s
ms
10
1.0
7
5
3
2
S
/B
Li
m
ite
d
1.0
7
5
3
2
0.1
7
5
3
2
3
5
7
0.1
Collector-to-Emitter Voltage, VCE – V
Transient Thermal Resistance, Rth(t) –
°C/W
5
3
10
2
3
5
7 100
2
3
7 1000
ITR06836
3.5
5
5
7
Collector-to-Emitter Sustain Voltage, VCE(sus) – V
100
2
3
5
7
1000
Rth(t) -- t
Tc=25°C
Collector Dissipation, P
C
– W
PC -- Ta
ITR06837
2
1.0
7
5
3
2
0.1
7
5
3
2
0.1
3.0
2.5
2.0
No
he
1.5
at
sin
k
1.0
0.5
0
2 3
5
1.0
2 3
5
Time, t – ms
10
2 3
5
100
2 3
5 1000
ITR06838
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
80
70
PC -- Tc
Collector Dissipation, P
C
– W
65
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
ITR06839
No.2848–3/4
2SC4425
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject to
change without notice.
PS No.2848–4/4
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