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HVL358B

Description
Variable Capacitance Diode, 20.25pF C(T), Silicon, EFP, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size33KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HVL358B Overview

Variable Capacitance Diode, 20.25pF C(T), Silicon, EFP, 2 PIN

HVL358B Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeEFP
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance3.7%
Minimum diode capacitance ratio2.2
Nominal diode capacitance20.25 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
HVL358B
Variable Capacitance Diode for VCO
ADE-208-1520 (Z)
Rev.0
Jul. 2002
Features
High capacitance ratio. (n = 2.20 min)
Low series resistance. (rs = 0.4
max)
Good C-V linearity.
Extremely small Flat Package (EFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL358B
Laser Mark
8
Package Code
EFP
Pin Arrangement
Cathode mark
Mark
1
8
2
1. Cathode
2. Anode

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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