Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | SAMSUNG |
| Parts packaging code | BGA |
| package instruction | VFBGA, |
| Contacts | 54 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 7 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | S-PBGA-B54 |
| JESD-609 code | e1 |
| length | 8 mm |
| memory density | 67108864 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 54 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | -25 °C |
| organize | 4MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | VFBGA |
| Package shape | SQUARE |
| Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum seat height | 1 mm |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 1.95 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 8 mm |
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