To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR08AS
OUTLINE DRAWING
Dimensions
in mm
4.4±0.1
1.6±0.2
1.5±0.1
2.5±0.1
0.8 MIN
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
CATHODE
ANODE
GATE
• I
T (AV)
........................................................................ 0.8A
• V
DRM
..............................................................400V/600V
• I
GT
......................................................................... 100µA
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
SOT-89
MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8 (marked “AD”)
400
500
320
400
320
12 (marked “AF”)
600
720
480
600
480
3.9±0.3
Unit
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine half wave, 180° conduction,
T
a
=51°C
V2
Ratings
1.26
0.8
10
0.42
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
48
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
mg
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V1.
With Gate-to-cathode resistance R
GK
=1kΩ
Jan.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Test conditions
T
j
=125°C, V
RRM
applied, R
GK
=1kΩ
T
j
=125°C, V
DRM
applied, R
GK
=1kΩ
T
a
=25°C, I
TM
=2.5A, instantaneous value
T
a
=25°C, V
D
=6V, I
T
=0.1A
V4
T
j
=125°C, V
D
=1/2V
DRM
, R
GK
=1kΩ
T
j
=25°C, V
D
=6V, I
T
=0.1A
Junction to
ambient
V2
V4
Limits
Min.
—
—
—
—
0.2
1
—
—
Typ.
—
—
—
—
—
—
1.5
—
Max.
0.5
0.5
1.5
0.8
—
100
V3
3
65
Unit
mA
mA
V
V
V
µA
mA
°C/W
T
j
=25°C, V
D
=12V, R
GK
=1kΩ
V2.
Soldering with ceramic plate (25mm
×
25mm
×
t0.7).
V3.
If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
I
GT
(µA)
A
1 ~ 30
B
20 ~ 50
C
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
V4.
I
GT
, V
GT
measurement circuit.
A1
60Ω
I
GS
3V
DC
A3
I
GT
A2
TUT
6V
DC
V1
R
GK
1 2
V
GT
1kΩ
SWITCH
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10
2
7 T
a
= 25°C
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0
1
2
3
4
5
RATED SURGE ON-STATE CURRENT
10
SURGE ON-STATE CURRENT (A)
9
8
7
6
5
4
3
2
1
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Jan.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS
10
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
V
FGM
= 6V
P
G(AV)
= 0.1W
V
GT
= 0.8V
I
GT
= 100µA
(T
j
= 25°C)
V
GD
= 0.2V
P
GM
= 0.5W
I
FGM
= 0.3A
GATE CURRENT (mA)
GATE VOLTAGE (V)
10
1
10
3
7 TYPICAL EXAMPLE
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10
0
10
–1
10
–2
10
–2
2 3 57
10
–1
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
2 3
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
GATE TRIGGER VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
DISTRIBUTION
TYPICAL EXAMPLE
0
20
40
60
80 100 120
JUNCTION TEMPERATURE (°C)
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
3
7 25 25 t0.7
5 ALUMINUM BOARD
3 WITH SOLDERING
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (s)
0
–40 –20
AVERAGE POWER DISSIPATION (W)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
θ
360°
RESISTIVE, INDUCTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AMBIENT TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
1.6
θ
= 30° 60° 90° 120°
1.4
180°
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ
WITH SOLDERING
360°
120
100
80
60
40
20
0
0
θ
= 30°
90° 180°
60° 120°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Jan.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
AVERAGE POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
RESISTIVE,
INDUCTIVE
140
θ
LOADS
360°
120
NATURAL
CONVECTION
100
θ
= 180°
80
60
90°C/W
40
20
R
th(j – a)
= 200°C/W
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
65°C/W
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
1.6
θ
= 30° 60° 90° 120°
1.4
180°
1.2
1.0
0.8
0.6
0.4
0.2
0
0
θ
θ
360°
RESISTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ θ
WITH SOLDERING
360°
120
100
80
60
40
20
0
0
60°
120°
θ
= 30°
90°
180°
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RESISTIVE LOADS
NATURAL
CONVECTION
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
1.6
90° 180°
θ
= 30° 60° 120° 270°
1.4
DC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
100
80
60
40
20
0
0
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C )
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ
WITH SOLDERING
360°
120
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
140
120
100
80
60
40
20
TYPICAL EXAMPLE
R
GK
= 1kΩ
θ
= 30° 60° 120° 270°
90°
180°
DC
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
Jan.2000
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