2SK2222 datasheet, PDF - EEWORLD Datasheet

2SK2222: DescriptionTRANSISTOR 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size1MB，45 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK2222 Overview

TRANSISTOR 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Parameter Name	Attribute value
package instruction	2-16F1B, 3 PIN
Reach Compliance Code	unknow
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	2.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	80 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2004-3

PRODUCT GUIDE

Power MOSFETs

semiconductor

2004

http://www.semicon.toshiba.co.jp/eng

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