OKI
Semiconductor
MSM5412222A
262,214-Word x 12-Bit Field Memory
DESCRIPTION
REVISION-3 1999.6.10
The OKI MSM5412222A is a high performance 3-Mbit, 256K X 12-bit, Field Memory. It is
especially designed for high-speed serial access applications such as HDTVs, conventional
NTSC TVs, VTRs, digital movies and Multi-media systems. MSM5412222A is a FRAM for wide
or low end use in general commodity TVs and VTRs exclusively. MSM5412222A is not
designed for high end use in medical systems, professional graphics systems which require
long term picture storage, data storage systems and others. Two or more MSM5412222As can
be cascaded directly without any delay devices between them. (Cascading provides larger
storage depth or a longer delay).
Each of the 12-bit planes has separate serial write and read ports. These employ independent
control clocks to support asynchronous read and write operations. Different clock rates are also
supported, which allow alternate data rates between write and read data streams.
The MSM5412222A provides high speed FIFO, First-In First-Out, operation without external
refreshing: MSM5412222A refreshes its DRAM storage cells automatically, so that it appears
fully static to the users.
Moreover, fully static type memory cells and decoders for serial access enable the refresh free
serial access operation, so that serial read and/or write control clock can be halted high or low
for any duration as long as the power is on. Internal conflicts of memory access and refreshing
operations are prevented by special arbitration logic.
The MSM5412222A’s function is simple, and similar to a digital delay device whose delay-bit-
length is easily set by reset timing. The delay length, and the number of read delay clocks
between write and read, is determined by externally controlled write and read reset timings.
Additional SRAM serial registers, or line buffers for the initial access of 256 X 12-bit enable high
speed first-bit-access with no clock delay just after the write or read reset timings.
Additionally, the MSM5412222A has a write mask function or input enable function (IE), and
read-data skipping function or output enable function (OE). The differences between write
enable (WE) and input enable (IE), and between read enable (RE) and output enable (OE) are
that WE and RE can stop serial write/read address increments, but IE and OE cannot stop the
increment, when write/read clocking is continuously applied to MSM5412222A. The input
enable (IE) function allows the user to write into selected locations of the memory only, leaving
the rest of the memory contents unchanged. This facilitates data processing to display a
“picture in picture” on a TV screen.
The MSM5412222A is similar in operation and functionality to OKI 1-Mbit Field Memory
MSM514222C and 2-Mbit Field Memory MSM518222A. Three MSM514222Cs or one
MSM514222C plus one MSM518222A can be replaced simply by one MSM5412222A.
OKI
Semiconductor
MSM5412222A
FEATURES
Single power supply : 5 V ±10%
512 Rows X 512 Columns X 12 bits
Fast FIFO (First-In First-Out) operation
High speed asynchronous serial access
Read/write cycle time
25 ns/30 ns
Access time
23 ns/25 ns
Direct cascading capability
Write mask function (Input enable control)
Data skipping function (Output enable control)
Self refresh (No refresh control is required)
Package options:
44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM5412222A-xxTS-K)
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM5412222A-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5412222A-25TS-K
MSM5412222A-30TS-K
MSM5412222A-25JS
MSM5412222A-30JS
Access Time(Max.)
23ns
25ns
23ns
25ns
Cycle Time(Min.)
25ns
30ns
25ns
30ns
Package
400 mil 44-Pin TSOP( )
400 mil 40-pin SOJ
þ
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OKI
Semiconductor
MSM5412222A
OPERATION
Write Operation
The write operation is controlled by three clocks, SWCK, RSTW, and WE. Write operation is
accomplished by cycling SWCK, and holding WE high after the write address pointer reset
operation or RSTW.
Each write operation, which begins after RSTW, must contain at least 80 active write cycles,
i.e. SWCK cycles while WE is high. To transfer the last data to the DRAM array, which at that
time is stored in the serial data registers attached to the DRAM array, an RSTW operation is
required after the last SWCK cycle.
Note that every write timing of MSM5412222A is delayed by one clock compared with read
timings for easy cascading without any interface delay devices.
Write Reset : RSTW
The first positive transition of SWCK after RSTW becomes high resets the write address
counters to zero. RSTW setup and hold times are referenced to the rising edge of SWCK.
Because the write reset function is solely controlled by the SWCK rising edge after the high
level of RSTW, the states of WE and IE are ignored in the write reset cycle.
Before RSTW may be brought high again for a further reset operation, it must be low for at
least two SWCK cycles.
Data Inputs : D
IN
0 - 11
Write Clock : SWCK
The SWCK latches the input data on chip when WE is high, and also increments the internal
write address pointer. Data-in setup time t
DS
, and hold time t
DH
are referenced to the rising
edge of SWCK.
Write Enable : WE
WE is used for data write enable/disable control. WE high level enables the input, and WE
low level disables the input and holds the internal write address pointer. There are no WE
disable time (low) and WE enable time (high) restrictions, because the MSM5412222A is in
fully static operation as long as the power is on. Note that WE setup and hold times are
referenced to the rising edge of SWCK.
Input Enable : IE
IE is used to enable/disable writing into memory. IE high level enables writing. The internal
write address pointer is always incremented by cycling SWCK regardless of the IE level.
Note that IE setup and hold times are referenced to the rising edge of SWCK.
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