NAND512R3A0AZA1 datasheet, PDF

NAND512R3A0AZA1: DescriptionFlash, 64MX8, 35ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63; Categorystorage storage; File Size917KB，57 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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NAND512R3A0AZA1 Overview

Flash, 64MX8, 35ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	63
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	35 ns
JESD-30 code	R-PBGA-B63
length	11 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	63
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.05 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	SLC NAND TYPE
width	9 mm

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