Power Bipolar Transistor, 7.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, ISOLATED TO-61, 3 PIN
Parameter Name | Attribute value |
Parts packaging code | TO-61 |
package instruction | POST/STUD MOUNT, O-MUPM-D3 |
Contacts | 3 |
Reach Compliance Code | unknow |
Shell connection | ISOLATED |
Maximum collector current (IC) | 7.5 A |
Collector-emitter maximum voltage | 450 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 7 |
JESD-30 code | O-MUPM-D3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Polarity/channel type | NPN |
Maximum power consumption environment | 71.4 W |
Maximum power dissipation(Abs) | 71 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 50 MHz |
VCEsat-Max | 1.5 V |
Base Number Matches | 1 |