APT4065BN datasheet, PDF - EEWORLD Datasheet

APT4065BN: DescriptionPower Field-Effect Transistor, 11A I(D), 400V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD; CategoryDiscrete semiconductor The transistor; File Size161KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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APT4065BN Overview

Power Field-Effect Transistor, 11A I(D), 400V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ADPOW
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (Abs) (ID)	11 A
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	115 pF
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	180 W
Maximum power dissipation(Abs)	180 W
Maximum pulsed drain current (IDM)	44 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	75 ns
Maximum opening time (tons)	52 ns

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