Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Microsemi |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 1300 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 300 V |
| Maximum drain current (ID) | 44 A |
| Maximum drain-source on-resistance | 0.075 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 245 |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 176 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | PURE MATTE TIN |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| APT30M75SFLLG | APT30M75BFLL | APT30M75BFLLG | APT30M75SFLL | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 |
| Is it lead-free? | Lead free | Contains lead | Lead free | Contains lead |
| Is it Rohs certified? | conform to | incompatible | conform to | incompatible |
| Maker | Microsemi | Microsemi | Microsemi | Microsemi |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | TO-247, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | D3PAK-3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | compliant | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 1300 mJ | 1300 mJ | 1300 mJ | 1300 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 300 V | 300 V | 300 V | 300 V |
| Maximum drain current (ID) | 44 A | 44 A | 44 A | 44 A |
| Maximum drain-source on-resistance | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 245 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 176 A | 176 A | 176 A | 176 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | NO | YES |
| Terminal form | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
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