APT30M75BFLLG datasheet, PDF - EEWORLD Datasheet

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APT30M75BFLLG: DescriptionPower Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size70KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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APT30M75BFLLG Overview

Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

APT30M75BFLLG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
Parts packaging code	TO-247
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Samacsys Description	Trans MOSFET N-CH 300V 44A 3-Pin(3+Tab) TO-247 Tube
Avalanche Energy Efficiency Rating (Eas)	1300 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V
Maximum drain current (ID)	44 A
Maximum drain-source on-resistance	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	176 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

APT30M75BFLLG Related Products

	APT30M75BFLLG	APT30M75BFLL	APT30M75SFLL	APT30M75SFLLG
Description	Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN	Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN	Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3	Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
Is it lead-free?	Lead free	Contains lead	Contains lead	Lead free
Is it Rohs certified?	conform to	incompatible	incompatible	conform to
Maker	Microsemi	Microsemi	Microsemi	Microsemi
package instruction	FLANGE MOUNT, R-PSFM-T3	TO-247, 3 PIN	D3PAK-3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	compliant	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	1300 mJ	1300 mJ	1300 mJ	1300 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V	300 V	300 V	300 V
Maximum drain current (ID)	44 A	44 A	44 A	44 A
Maximum drain-source on-resistance	0.075 Ω	0.075 Ω	0.075 Ω	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	3	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	245
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	176 A	176 A	176 A	176 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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