FAST RECOVERY DIODE
DFM1F
FEATURES
•
For high speed switching.
•
Diffused-junction. Resin encapsulated.
Direction of polarity
OUTLINE DRAWING
φ
2.65
(0.10)
Unit in mm(inch)
φ
0.6
(0.024)
59MIN. (2.32)
5
(0.2)
1F1
DFM1F1 (100V)
DFM1F2 (200V)
DFM1F4 (400V)
DFM1F6 (600V)
Weight: 0.23 (g)
Yellow
White
Blue
Red
ABSOLUTE MAXIMUM RATINGS
Items
Repetitive Peak Reverse Voltage
Average Forward Current
Surge(Non-Repetitive) Forward Current
I
2
t Limit Value
Operating Junction Temperature
Storage Temperature
V
RRM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Type
V
A
A
A
2
s
°C
°C
DFM1F1
100
DFM1F2
200
DFM1F4
400
27MIN.
(1.06)
Type mark
DFM1F6
600
Single-phase half sine wave 180° conduction
1.0 TL = 50°C, Lead length = 6mm
(
40( Without PIV, 10ms conduction, Tj = 40°C start )
6.4( Time = 2 ~ 10ms, I = RMS value )
-40 ~ +150
-40 ~ +150
Notes
(1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(T
L
=25°C)
Items
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Steady State Thermal Impedance
Symbols
I
RRM
V
FM
trr
R
th(j-a)
R
th(j-l)
Units
µA
V
µs
°C/W
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
20
10
1.3
0.1
100
70
Test Conditions
DFM1F1,2
DFM1F4,6
Rated V
RRM
I
FM
=1.0Ap, Single-phase half sine
wave 1 cycle
I
F
=0.5A, I
rp
=1.0A, 25%recovery
Lead length = 6 mm
PDE-DFM1F-0
Symbol
Type
Color of symbol
& cathode band
Cathode band
27MIN.
(1.06)
)
DFM1F
Forward characteristics
100
Single-phase half sine wave
Conduction : 10ms 1 Cycle
Max. average forward power dissipation
(Resistive or inductive load)
MAX. AVERAGE FORWARD POWER DISSIPATION (W)
2.0
DC
PEAK FORWARD CURRENT (A)
1.6
Single-phase
( 50Hz )
10
1.2
TL=150˚C
TL=25˚C
0.8
1
0.4
0.1
0
1
2
3
4
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
PEAK FORWARD VOLTAGE DROP (V)
AVERAGE FORWARD CURRENT (A)
Max. allowable ambient temperature
(Resistive or inductive load)
MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C)
180
160
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
PC board
(100×180×1.6t)
Copper foil
( 5.5)
Single-phase half sine wave
180˚
conduction (50Hz)
Lead length
=6mm
Max. allowable lead temperature
(Resistive or inductive load)
180
MAX. ALLOWABLE LEAD TEMPERATURE (˚C)
L
160
140
120
100
80
60
40
20
0
0
0.2
L
Lead length
=6mm
Lead temp
Copper foil
( 5.5)
PC board
(100×180×1.6t)
Single-phase half sine wave
180˚
conduction (50Hz)
0.4
0.6
0.8
1.0
1.2
AVERAGE FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
Surge forward current characteristic
(Non-repetitive)
50
Surge current
peak value
Transient thermal impedance
0
TRANSIENT THERMAL IMPEDANCE (˚C/W)
SURGE FORWARD CURRENT (A)
10ms
100
Rth(j-a)
40
1 cycle
Rth(j-l)
30
Without PIV
10
20
L
Lead length
=6mm
Lead temp
Copper foil
( 5.5)
PC board
(100×180×1.6t)
1.0
10
0
1
10
CYCLES
100
0.1
0.001
0.01
0.1
1.0
10
100
TIME (s)
PDE-DFM1F-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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“Inquiry” portion on the top page of a home page.
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