Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Parameter Name | Attribute value |
package instruction | IN-LINE, R-PSIP-T3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 2 A |
Collector-emitter maximum voltage | 100 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 120 |
JESD-30 code | R-PSIP-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 1.5 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Base Number Matches | 1 |