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NTE5512

Description
Silicon Controlled Rectifier, 5.024A I(T)RMS, 5000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-66,
CategoryAnalog mixed-signal IC    Trigger device   
File Size22KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Download Datasheet Parametric View All

NTE5512 Overview

Silicon Controlled Rectifier, 5.024A I(T)RMS, 5000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-66,

NTE5512 Parametric

Parameter NameAttribute value
MakerNTE
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Shell connectionANODE
ConfigurationSINGLE
Maximum DC gate trigger current15 mA
Maximum DC gate trigger voltage2 V
Maximum holding current20 mA
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
On-state non-repetitive peak current60 A
Number of components1
Number of terminals2
Maximum on-state current5000 A
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current5.024 A
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Trigger device typeSCR
NTE5511 thru NTE5513
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are in-
tended for use in power–control and power–switching applications. These devices are available in
a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating
of 5A (rms value) at a case temperature of +75°C.
Features:
D
Designed Especially for High–Volume Systems
D
Readily Adaptable for PC Boards and Metal
Heat Sinks
D
Low Switching Losses
D
High di/dt and dv/dt Capabilities
D
Shorted Emitter Gate–Cathode Construction
D
Forward and Reverse Gate Dissipation Ratings
D
All–Diffused Construction Assures Exceptional
Uniformity and Stability of Characteristics
D
Direct–Soldered Internal Construction Assures
Exceptional Resistance to Fatigue
D
Symmetrical Gate–Cathode Construction Pro-
vides Uniform Current Density, Rapid Electrical
Conduction, and Efficient Heat Dissipation
D
All–Welded Construction and Hermetic Sealing
D
Low Leakage Currents, Forward and Reverse
D
Low Forward Voltage Drop at High Current
Levels
D
Low Thermal Resistance
Absolute Maximum Ratings:
(For Operation with Sinusoidal AC Supply Voltage at a Frequency
between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (Non–Repetitive), V
RM
(non–rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Peak Reverse Voltage (Repetitive), V
RM
(rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Peak Forward Blocking Voltage (Repetitive), V
FBOM
(rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Average DC Forward Current, I
F(av)
(T
C
= +75°C mounted on heat sink, conduction angle or 180°) . . . . . . . . . . . . . . . . . . . . 3.2A
RMS Forward Current (T
C
= +75°C mounted on heat sink), I
FRMS
. . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak Surge Current (For one cycle of applied voltage), i
FM(surge)
. . . . . . . . . . . . . . . . . . . . . . . . . 60A
Sub–Cycle Surge (Non–Repetitive, for a period of 1ms to 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . 15A
2
sec
Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
Gate Power (Peak, Forward, or Reverse, for 10µs duration, Note 2), P
GM
. . . . . . . . . . . . . . . . 13W
Average Gate Power (Note 2), P
GAV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Case Temperature Range, T
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Note 1. V
FB
= v
BOO
(min value), I
GT
= 200mA, 0.5µs rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is
permissible.
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