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2SA1587-BL(TE85L)

Description
2SA1587-BL(TE85L)
CategoryDiscrete semiconductor    The transistor   
File Size294KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SA1587-BL(TE85L) Overview

2SA1587-BL(TE85L)

2SA1587-BL(TE85L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SA1587
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1587
Audio Frequency General Purpose Amplifier Applications
High voltage: V
CEO
=
−120
V
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 200~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC4117
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−120
−120
−5
−100
−20
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF
Test Condition
V
CB
= −120
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −10
mA, I
B
= −1
mA
V
CE
= −6
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
Rg
=
10 kΩ
Min
200
Typ.
100
4
1.0
Max
−0.1
−0.1
700
−0.3
10
V
MHz
pF
dB
Unit
μA
μA
Note: h
FE
classification GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Marking
1
2007-11-01

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