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IS42S16160A1-7TL

Description
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54
Categorystorage    storage   
File Size993KB,49 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance  
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IS42S16160A1-7TL Overview

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54

IS42S16160A1-7TL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)143 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee3
length22.22 mm
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals54
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.16 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width10.16 mm
IS42S83200A1
(4-bank x 8,388,608 - word x 8-bit)
IS42S16160A1
(4-bank x 4,194,304 - word x 16-bit)
ISSI
October 2005
®
256 Mb Synchronous DRAM
DESCRIPTION
IS42S83200A1 is a synchronous
256Mb
SDRAM and is
organized as 4-bank x 8,388,608-word x 8-bit; and
IS42S16160A1 is organized as 4-bank x 4,194,304-word x
16-bit.
All inputs and outputs are referenced to the rising
edge of CLK.
IS42S83200A1
and
IS42S16160A1
achieve very
high speed clock rates
up to 166MHz,
and are
suitable for main memories or
graphic
memories in computer systems.
FEATURES
ITEM
tCLK
Clock Cycle Time
(Min.)
CL=2
CL=3
IS42S83200A1/16160A1
-6
-
6
42
15
CL=2
CL=3
-7
-
7
45
20
-
5.4
63
-75
10
7.5
45
20
6
5.4
67.5
110
Unit
ns
ns
ns
ns
ns
ns
ns
mA
mA
mA
tRAS Active to Precharge Command Period (Min.)
(Min.)
tRCD Row to Column Delay
tAC
tRC
Icc1
Icc6
Access Time from CLK
Ref /Active Command Period
Operation Current (Single Bank)
Self Refresh Current
(Max.)
(Min.)
(Max.)
IS42S83200A1
IS42S16160A1
-
5
60
-
130
3
-
130
3
-
3
(Max.) -6,-7,-75
- Single 3.3V ±0.3V power supply
- Max. Clock frequency:
-6:166MHz<3-3-3>
-7:143MHz<3-3-3>
-75:133MHz<3-3-3>
- Fully synchronous operation referenced to clock rising edge
- 4-bank operation controlled by BA0,BA1(Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/FP (programmable)
- Burst type- Sequential and interleave burst (programmable)
- Byte Control- DQML and DQMU (IS42S16160A1)
- Random column access
- Auto precharge / All bank precharge controlled by A10
- Auto and self refresh
- 8192 refresh cycles /64ms(4 banks concurrent refresh)
- LVTTL Interface
- Row address A0-12 /Column address A0-9(x8) / A0-8(x16)
- Package:
400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch
-
Lead-free available
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
10/28/05
1

IS42S16160A1-7TL Related Products

IS42S16160A1-7TL IS42S83200A1-75TL
Description Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TSOP2 TSOP2
package instruction TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32
Contacts 54 54
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 143 MHz 133 MHz
I/O type COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G54 R-PDSO-G54
JESD-609 code e3 e3
length 22.22 mm 22.22 mm
memory density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 16 8
Humidity sensitivity level 3 3
Number of functions 1 1
Number of ports 1 1
Number of terminals 54 54
word count 16777216 words 33554432 words
character code 16000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 16MX16 32MX8
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2
Encapsulate equivalent code TSOP54,.46,32 TSOP54,.46,32
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) 260 260
power supply 3.3 V 3.3 V
Certification status Not Qualified Not Qualified
refresh cycle 8192 8192
Maximum seat height 1.2 mm 1.2 mm
self refresh YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.002 A 0.002 A
Maximum slew rate 0.16 mA 0.16 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal form GULL WING GULL WING
Terminal pitch 0.8 mm 0.8 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
width 10.16 mm 10.16 mm
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