2SC2714RTE85L datasheet, PDF - EEWORLD Datasheet

2SC2714RTE85L: DescriptionTRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size537KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SC2714RTE85L Overview

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal

Parameter Name	Attribute value
Reach Compliance Code	unknow
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Minimum power gain (Gp)	15 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	550 MHz
Base Number Matches	1

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