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2N3172E3

Description
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size87KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N3172E3 Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

2N3172E3 Parametric

Parameter NameAttribute value
Objectid8059220226
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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