NDB510BL86Z datasheet, PDF - EEWORLD Datasheet

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NDB510BL86Z: DescriptionPower Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size255KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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NDB510BL86Z Overview

Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

NDB510BL86Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	52 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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	NDB510BL86Z	NDP510BES62Z	NDB510AL86Z	NDP510BS62Z	NDB510AEL86Z	NDP510AES62Z	NDB510BEL86Z
Description	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Maker	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	13 A	13 A	15 A	13 A	15 A	15 A	13 A
Maximum drain-source on-resistance	0.15 Ω	0.15 Ω	0.12 Ω	0.15 Ω	0.12 Ω	0.12 Ω	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-263AB	TO-220AB	TO-263AB	TO-220AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
Number of components	1	1	1	1	1	1	1
Number of terminals	2	3	2	3	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	52 A	52 A	60 A	52 A	60 A	60 A	52 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	NO	YES	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Shell connection	DRAIN	-	DRAIN	-	DRAIN	-	DRAIN
Avalanche Energy Efficiency Rating (Eas)	-	65 mJ	-	-	65 mJ	65 mJ	65 mJ

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